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| Datasheet File OCR Text: |
| NTE352 Silicon NPN Transistor RF Power Amp, Driver Description: The NTE352 is a silicon NPN transistor in a W65 type package designed primarily for use in 12.5V VHF large-signal power amplifier applications required in commercial and industrial FM equipment to 175MHz. Features: D Specified 12.5V, 175MHz Characteristics: Output Power = 75W Minimum Gain = 7.0dB Efficiency = 55% D Characterized with Series Equivalent large-Signal Impedance Parameters D Internal Matching Network Optimized for Minimum Gain Frequency Slope Response over the Range 136 to 175MHz D Load Mismatch capability at Rated POUT and Supply Voltage Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Collector Current (Peak), IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Total Device Dissipation (Note 1, TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43mW/C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resuistance, Junction-to-Case (Note 2), RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7C/W Note 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. Note 2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage V(BR)CEO IC = 100mA, IB = 0 V(BR)CES IC = 50mA, VBE = 0 Emitter-Base Breakdown Voltage ON Characteristics DC Current Gain hFE IC = 5A, VCE = 5V 10 75 150 V(BR)EBO IE = 10mA, IC = 0 18 36 4 - - - - - - V V V Symbol Test Conditions Min Typ Max Unit Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified) Parameter Dynamic Characteristics Output Capacitance Cob GPE VCB = 15V, IE = 0, f = 0.1MHz Pout = 75W, f = 175MHz Pout = 75W, f = 175MHz Pout = 75W, f = 175MHz, VSWR = 30:1, All Phase Angles - 235 300 pF Symbol Test Conditions Min Typ Max Unit Functional Tests (VCC = 12.5V unless otherwise specified) Common-Emitter Amplifier Power Gain Collector Efficiency Load Mismatch 7.0 55 8.5 60 - - dB % No Degradation in Output Power .205 (5.18) .215 (5.48) .122 (3.1) Dia E .405 (10.3) Min B C E .155 (3.94) .500 (12.7) Dia .005 (0.15) .270 (6.85) .160 (4.06) .725 (18.43) .975 (24.78) |
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